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Kingston Memory KSM32RD4/64HCR 64GB 3200MHz DDR4 ECC Reg CL22 DIMM 2Rx4 Hynix C
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New $444.44
Product details
| Management number | 205885553 | Release Date | 2025/11/02 | List Price | $177.78 | Model Number | 205885553 | ||
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| Category | |||||||||
Marketing Information
KSM32RD4/64HCR
64GB 2Rx4 8G x 72-Bit PC4-3200
CL22 Registered w/Parity 288-Pin DIMM
DESCRIPTION
Kingston's KSM32RD4/64HCR is a 8G x 72-bit (64GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx4, ECC, memory module, based on thiry-six 4G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• Power Supply: VDD = 1.2V
• VDDQ = 1.2V
• VPP = 2.5V
• VDDSPD = 2.41V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported
64GB 2Rx4 8G x 72-Bit PC4-3200
CL22 Registered w/Parity 288-Pin DIMM
DESCRIPTION
Kingston's KSM32RD4/64HCR is a 8G x 72-bit (64GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx4, ECC, memory module, based on thiry-six 4G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• Power Supply: VDD = 1.2V
• VDDQ = 1.2V
• VPP = 2.5V
• VDDSPD = 2.41V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported
Detail Specifications
| CL(IDD) 22 cycles |
| Row Cycle Time (tRCmin) 45.75ns(min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) |
| Row Active Time (tRASmin) 32ns(min.) |
| Maximum Operating Power |
| UL Rating 94 V - 0 |
| Operating Temperature 0o C to +85o C |
| Storage Temperature -55o C to +100o C |
| Item Dimension (L"xW"xH") 7 x 3 x 1 Weight 1 lb Warranty Information 1 Year |
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